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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 1/4 HLB122J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122J is a medium power transistor designed for use in switching applications. Features * High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-252 Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................................... +150 C * Maximum Power Dissipation Total Power Dissipation (Tc=25C) ..................................................................................... 30 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................... 600 V BVCEO Collector to Emitter Voltage.................................................................................. 400 V BVEBO Emitter to Base Voltage............................................................................................ 6 V IC Collector Current (DC) ............................................................................................... 800 mA IC Collector Current (Pulse) ......................................................................................... 1600 mA IB Base Current (DC) ..................................................................................................... 100 mA IB Base Current (Pulse).................................................................................................. 200 mA Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 fT Min. 600 400 6 10 5 Typ. Max. 10 10 10 400 800 1 40 0.6 Unit V V V uA uA uA mV mV V Test Conditions IC=100uA IC=10mA IE=10uA VCB=600V VCE=400V VEB=6V IC=100mA, IB=20mA IC=300mA, IB=60mA IC=100mA, IB=20mA VCE=10V, IC=0.1A VCE=10V, IC=0.5A VCC=100V, IC=0.3A, IB1=-IB2=0.06A *Pulse Test: Pulse Width 380us, Duty Cycle2% uS HLB122J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 10000 Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 2/4 Saturation Voltage & Collector Current 125 C o 75 C o Saturation Voltage (mV) 1000 75 C 125 C o o o 25 C o hFE 10 100 25 C hFE @ VCE=10V 10 VCE(sat) @ IC=5IB 1 1 10 100 1000 1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VBE(sat) @ IC=5IB ON Voltage & Collector Current 1000 75 C 1000 25 C o o 125 C o 100 1 10 100 1000 ON Voltage-VBE(on) (mV) Saturation Voltage (mV) VBE(on) @ VCE=10V 100 1 10 100 1000 Collector Current-IC (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 Switching Time & Collector Current 10 VCC=45V, IC=5IB1=-5IB2 Capacitance-Cob (pF) Switching Time (us).. . Tstg 1 10 Ton Tf 1 0.1 1 10 100 0.1 100 1000 Reverse-Biased Voltage (V) Collector Current (mA) HLB122J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 3/4 Safe Operating Area 10000 Collector Current (mA) 1000 100 PT=1ms PT=100ms PT=1s 10 1 1 10 100 1000 Forward-Biased Voltage (V) HLB122J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension A C Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 4/4 Marking: H LB 122J Date Code Control Code B D L F G Style: Pin 1.Base 2.Collector 3.Emitter 3 H E K 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB122J HSMC Product Specification |
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